Discrete devices process solutions

Oxford Instruments has a wide range of processing equipment suitable for Compound
Semiconductor based RF and Power devices.

  • Our Atomic Layer Deposition (ALD) processes provide excellent passivation of GaN/AlGaN reducing threshold voltage shift
  • Our GaN etch processes for power semiconductor devices are optimised to reduce plasma damage and produce smooth etched profiles
  • Etch rates can be tuned to just a few nm/min for ultra low damage and controlled etch of just 10-30nm of AlGaN
  • SiC via etch achieves high rate with excellent sidewall quality
  • SiC feature etch shows smooth etch surfaces for optimal device performance

Image Gallery

Video: Power Semiconductor Applications & Systems