A Faster Etch For RF Devices
For the RF device industry, smooth and fast SiC backside via etching is crucial to high performance, cost-effective semiconductors. As GaN-on-SiC RF devices reach market, we have delivered a new via etch process to ease fabrication. Dr Mark Dineen, Technical Marketing Manager at Oxford Instruments discusses this in detail in Compound Semiconductor.
"Just last month, Oxford Instruments revealed its latest SiC via etch process to be added to the PlasmaPro 100 Polaris etch system.
Already designed to deliver fast etch rates on GaN, Sapphire, SiC wafers and more, the single wafer etch system now promises a faster, smooth via etch through SiC at a time when the wide bandgap material is proving crucial to the development of GaN-on-SiC RF devices.
The road to the smooth SiC via hasn't been straightforward. SiC backside via etching is crucial to form a contact with electrodes during the fabrication of GaN-on-SiC transistors. However SiC is a tough material to etch and researchers worldwide have grappled with how best to handle a substrate with a hardness close to that of diamond. Oxford Instruments now believes it has the answer..."