Our ALD and 2D technical specialists have teamed with the Eindhoven University of Technology research teams to realise Atomic layer deposition (ALD) of 2D transition metal dichalcogenides (TMDCs) for nanodevice applications

The FlexAL2D offers a number of benefits for growth of 2D materials:

2D materials growth Robust ALD processes for 2D materials Tunable morphology
  • At CMOS compatible temperatures
  • With precise digital thickness control
  • Over a large area (200mm wafers)
  • Self-limiting ALD growth
  • MoS2:
    • Oxygen and carbon free (<2%)
    • High growth per cycle ~0.1 nm/cycle
    • Crystalline material above 300°C

Control over basal plane or edge plane orientation

  • Growth of ALD dielectrics & other ALD layers on 2D materials in one tool
    • Create advanced 2D device structures
  • RF substrate biasing option for film property control