NEW White Paper: The Essential Steps for High Performance GaN RF Devices
Dr Mark Dineen & Dr Harm Knoops, Oxford Instruments Plasma Technology
GaN on SiC RF devices are becoming increasingly important to realise the efficient high frequency devices required for today’s communications. The high electron mobility of the AlGaN/GaN 2DEG enables fast switching times with low power loss. Building these devices requires precise control of plasma processing, without this knowledge device lifetime and performance will be compromised. Oxford Instruments Plasma Technology delivers the solutions through advanced technology and process know-how.