As a leading provider of process solutions for a broad range of applications, Oxford Instruments is delighted to announce the development and launch of the SiC via plasma etch process using its high performance PlasmaPro 100 Polaris etch system.
SiC is becoming an increasingly important material, particularly in the arena of high performance GaN RF devices using SiC as a substrate. A smooth via etch through the SiC is essential to enable these devices, and Oxford Instruments has developed the ideal solution for etching high quality SiC vias efficiently.
Combined with a low damage GaN etch within the same hardware, the PlasmaPro100 Polaris offers a unique capability for GaN based RF device plasma etch processing requirements.
Dr Mark Dineen, Optoelectronics Product Manager at Oxford Instruments Plasma Technology describes this latest technology that offers several process capabilities suited to the SiC via application.