Oxford Instruments and das-nano demonstrate non-destructive wafer based thickness and resistivity metrology for PEALD TiN.

Commonly titanium nitride (TiN) thickness and resistivity wafer fab in-line metrology is based on ellipsometry and 4-point probe resistivity mapping. Alternative and relatively slower or more complex methods are X-ray photoelectron spectroscopy (XPS), X-ray reflectivity (XRR) and X-ray fluorescence (XRFS). TiN thin films are highly conductive and lose transparency for thicker layers which can make it challenging to accurately measure the thickness by ellipsometry above 10-20 nm. At about 50 nm layer thickness TiN is non-transparent and has a bronze color changing to gold for even thicker layers. In the case of resistivity mapping, 4-point probe is a destructive method leaving scratches from the needles that penetrates the TiN layer and possibly also damages the underlying layers and devices.

We love hearing from our happy customers and this is another great example of our Symmetry #EBSD detector in action. https://t.co/sUEHqJgPBK
1:31 PM - 23 Apr 18
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