End point results of various ICPCVD Plasma CleansDr Owain Thomas, Applications Team Leader, Oxford Instruments Plasma Technology

Getting the maximum tool utilisation during deposition of dielectric films requires minimising the clean overhead. Here we report the details for SiO2 but it is also equally effective for Si3N4 films.

The in-situ chamber plasma cleaning process plays an important role in the manufacturing throughput. In ICPCVD processing, a significant proportion of the tool time is devoted to running the plasma using etching gases to clean the chamber. This includes cleaning the inner ICP tube together with the chamber walls and the lower electrode.  Previously the plasma clean process would be carried out after a significant amount of material was deposited in the chamber.  A reduction in overall plasma clean time was therefore required in order to improve wafer throughput and cost of ownership of the system.

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