Cross-sectional SEM of a conventional nanowire array etched to 440nm depthKatarzyna Korwin-Mikkea, Mark McNiea, Erwin Berenschotb, Roald Tiggelaarc, Meint De Boerc

Silicon is the most common material used in semiconductor fabrication. Due to its properties, availability and ease of processing, it is widely used in areas such as electronics, MEMS, NEMS and photonics.

Increasing attention is focused on nanoscale etching for silicon including the formation of advanced geometry transistor gate (e.g. FinFET), trench isolation, photonic crystals and nanowires. Nanowires have potential applications in photonics, photovoltaics, optoelectronics and microelectronics. The focus of this work was to demonstrate the formation and control the shape of arrays of nanowires at the wafer scale using a top down fabrication approach – employing a combination of Displacement Talbot Lithography (DTL) and plasma etch.

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a. Oxford Instruments Plasma Technology, North End, Yatton, BS494AP, United Kingdom
b. Mesoscale Chemical Systems, MESA+ Institute of Nanotechnology, University of Twente, P.O. Box 217, 7500AE, Enschede, The Netherlands
c. NanoLab Cleanroom, MESA+ Institute of Nanotechnology, University of Twente, Institute for Nanotechnology, P.O. Box 217, 7500 AE, Enschede, The