Video: Power Semiconductor Applications and Systems

Wide band gap power semiconductor device production

The increasing adoption on renewable energy sources and the ever nearer prospect of electric vehicles is driving demand for power semiconductor components. Until now the device technology has mostly been based on silicon, however wide band gap materials such as GaN and SiC offer the possibility to increase efficiencies and reduce energy loss in power devices.

By combining our unique history of supplying processing equipment for high power silicon device fabrication with our extensive experience of production equipment and processes for GaN based HBLED device manufacture, we have produced world leading solution for wide band gap power device fabrication.

Power Semiconductors Brochure

Wide band gap power semiconductor device production: GaN and SiC process solutions

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We're @ 10th PESM workshop this wk.Dr Welch is presenting a poster on Multiple-step ICP etching of magnetic metals https://t.co/a2XaN7rhMD
7:52 PM - 17 Oct 17
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