In failed semiconductor devices it is important to be able to localise faults for subsequent analysis. OmniProbe nanomanipulators facilitate a number of different techniques for the imaging of electrical properties conductivity.
Electron Beam Induced Current (EBIC) and Electron Beam Absorbed Current (EBAC) measurements to image electrical defects in devices
Repeatable touch down and contact of 10 nm features
The E3 quantitative nanoprobing microanalysis system enables the electrical characterisation (EBIC, EBAC and Electrical probing) of devices and materials in the SEM & FIB. This 8 page brochure gives an overview of the E3 product.
EBIC Analysis Application Note
Electron Beam Induced Current is a well established analysis method of electrical activity in the SEM. It provides a unique correlation of electrical and structural properties with very high spatial resolution.This application note shows how the Oxford Instruments integrated EBIC microanalysis system is configured and applied to analyse defects in a Si solar cell.
Once a fault is identified, it and the surrounding material must be isolated and often removed for further chemical or structual characterisation.
Repeatable and reliable lift out using OmniProbe 400
Workflows for advanced lamella preparation
Monitor sample thickness during thining with AZtec LayerProbe
Elemental Characterisation in the FIB/SEM
Chemical analysis using energy dispersive X-ray spectroscopy (EDS) in the Focused Ion Beam (FIB) or Scanning Electon Microscope (SEM) is an important diagnostic tool to undertsand the root cause of a device failure. It is used to link device characteristics with chemical variations in the fabrication process.
Fast elemental mapping using AZtecLive and Ultim Max Large Area SDD
Unrivalled low kV EDS for TEM like results in the SEM using Ultim Extreme
Solutions for layer thickness measurement and automated partical detection and analysis with AZtecFeature
LayerProbe - Analysing Flexible Electronics
Research and development of electronic circuitry mounted on plastic substrates is gathering pace with an increasingly large range of products incorporating flexible components. Such circuits are increasingly found in consumer electronics, medical devices, automotive settings and in satellites.
In order to assess the structural properties of the electronic components, they have to be analysed while on the plastic substrate without compromising their structural integrity.
Mapping Semiconductor Devices in the SEM
As semiconductor devices continue to decrease in size to improve performance and take advantage of advances in fabrication techniques, there is a need to analyse both their structure and chemistry at ever increasing resolution. Typically this requires the use of TEM for metrology and failure analysis. Using ultrahigh resolution FEG-SEM, low kV imaging and the new X-Max Extreme EDS detector we demonstrate the ability to retain some of this high resolution analysis in the SEM. This allows for better targeting of resources and increased throughput of analysis.
Electron Backscatter Detection (EBSD) delivers an understanding of how the structure of material changes during the fabrication process and how this can cause faults in devices.
Symmetry EBSD offers the highest speed and sensitivity for characterisation of semiconductor materials
Measure and viisualise grain size and structure in real time
Superfast EBSD minimises drift during nanoscale characterisation
Transmission Kikuchi Diffraction (TKD) with thse Symmetry detector achieves extreme spatial resolution at fastest speed
Symmetry - EBSD Detector
Symmetry, the world's first EBSD detector based on CMOS sensor technology, is set to revolutionise EBSD analysis.
Transmission Kikuchi Diffraction (TKD) of Metals
Successful TKD analyses require an EBSD detector with both high speed and high sensitivity. The suitability of Symmetry for TKD is demonstrated here on both deformed Al alloys and nanocrystalline Ni.
Elemental Characterisation in the TEM
As feature sizes in single devices continue to decrease, being able to analyse the structural and chemical properties of faults requires the use of Transmission Electron Microscopy (TEM). AZtecTEM and X-Max SDD detectors allow chemical analysis in the TEM to be performed at single nanometre or even atomic resolution.
Large area X-Max EDS detectors deliver accurate results at ultra high resolution
Automatic absorption correction and thickness measuremtn for accurate quantitative analysis
Semiconductor analysis in the TEM
Development and testing of semiconductor devices requires extensive knowledge of local structure and elemental composition. With feature sizes of <5 nm, it is often necessary to perform imaging and EDS analysis in a S/TEM.
Once in the TEM, there are still many difficulties to be overcome to acquire accurate elemental maps. Elemental analysis of semiconductors is typically difficult due to strong overlaps of X-ray lines between commonly used elements and low concentrations of dopants. Not only are concentrations of dopants small but their X-ray lines often overlap with other materials used in semiconductor processing. This brief shows how AZtecTEM solves these overlaps to achieve an accurate elemental analysis.
A 16 page brochure showing why AZtecTEM is the most powerful solution for EDS on the TEM. It comprises software and hardware sections (inc X-Max 100TLE and X-Max TSR).
Before any analysis or defect identification can be performed the device must be prepared this becomes more challenging as device architecture becomes ever more 3-dimensional. Plasma assisted etch and deposition ensure accurate results quickly to maximise productivity.
Fast and clean removal of Polymide, IMD and metals allowing access to underlying layers
Problems throughout the structure can be traced and analysed
Decorating samples by thin film deposition greatly enhances accuracy of TEM and SEM analysis
Find out more