Atomic Layer Deposition Russia 2017
04 October 2017

The 2nd International Workshop “Atomic Layer Deposition Russia 2017” was held in the Saint Petersburg State Institute of Technology, Russia, from 24-30th September 2017. 50 attendees from Russia, Europe, North America and China participated in the workshop which focused on atomic layer deposition (ALD).

A broad range of research topics enabled by ALD were discussed during the four day workshop including area selective ALD, hybrid materials, transparent conductive oxides, ferroelectric HfO2 and ZrO2 for DRAM, and modelling of ALD processes.

In a presentation entitled “Optimisation of ALD Films Using RF Substrate Biasing”, Aileen O’Mahony from Oxford Instruments Plasma Technology discussed recent process development enabled by RF substrate biasing on the FlexAL ALD system.

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