In addition to the benefits of thermal ALD, remote plasma allows for a wider choice of precursor chemistry with enhanced film quality:

  • Plasma enables low-temperature ALD processes and the remote source maintains low plasma damage
  • Eliminates the need for water as a precursor, reducing purge times between ALD cycles - especially for low temperatures
  • Higher quality films through improved removal of impurities, leading to lower resistivity, higher density, etc
  • Effective metal chemistry through use of hydrogen plasma
  • Ability to control stoichiometry/phase
  • Reduced nucleation delay
  • Plasma surface treatment
  • Plasma cleaning of chamber is possible for some materials