PlasmaPro 100 CobraWe have developed innovative hardware specifically for Atomic Layer Etching (ALE)

Ultra low damage | Ultra high selectivity | Ultra accurate depth control

  • Etch rates 2 to 7Å/cycle
  • Demonstrated results in a-Si, Si, SiO2, MoS2 layer etching
  • Fast recipe control down to 10ms
  • ALD-style gas dose delivery using “ALD valves” with 10ms open-close response
  • Ultra low power operation
  • Ability to etch in ALE or normal etch mode

ALE cycle. SEM image shows 25nm wide Si trenches etched to 110nm depth by ALEALE cycle. SEM image shows 25nm wide Si trenches etched to 110nm depth by ALE

 

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Atomic Layer Etch Flyer

Innovative hardware for ALE

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PlasmaPro 100 Cobra ICP Etch

PlasmaPro 100 Cobra ICP Etch

PlasmaPro 100 offers advanced plasma etch and deposition solutions on one platform with loadlock or cassette to cassette for RIE, ICP etch, ICP CVD and PECVD, upto 200mm single wafer platforms or multi-wafer batch capability.