Ion beam etching (IBE)

Ion beam technology that allows films to be etched or deposited by the use of beams of charged ions in a high vacuum system.

For etching, the ion beam is directed at the substrate to be patterned. For deposition, an ion beam strikes and sputters a target of material, which then coats the substrate tilted toward the target with the sputtered material. The properties of the deposited film will depend on the target material properties and on the ion sputter beam parameters (flux, energy, etc.) as well as the chamber ion source-target-substrate configuration.

Benefits of IBE:

  • Allows beam energy and ion flux to be independently controlled
  • Process takes place in a lower pressure working environment
  • Produces anisotropic etching
  • Provides means for all known materials to be etched
  • Allows profile/sidewalls control thanks to a variable etch beam angle relative to sample surface features


  Ionfab 300
Ion etch source 150mm or 300mm
Etch area Up to 200mm
Platen speed Up to 20rpm
Platen tilt angle -90ºC to +75 ºC1
Platen heat Embedded heaters up to 300ºC
Platen cooling Helium

1. If SIMS is used, platen tilt angle becomes -90ºC to +35 ºC


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9:34 AM - 21 Mar 18
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