CVD, PECVD and ICP CVD for growth of nanomaterials

  • High performance growth of nanomaterials with in-situ catalyst activation and
    rigorous process control
  • 3 temperature options are available on the Nanofab platform: 700°C, 800°C and 1200°C
  700°C table 800°C table 1200°C table
Thin Film Process SiOx, SiNx, aSiC, aSi, μc-Si, polySi* SiOx, SiNx, aSiC, aSi, μc-Si, polySi SiOx, SiNx, aSiC, aSi, μc-Si, polySi
1D Nano materials MWNTs, Si, Ge NWs, ZnO NWs MWNTs, SWNTs*, Si, Ge NWs MWNTs, SWNTs, Si, Ge NWs
2D Nano materials NA NCG, Vertical Graphene NCG, Vertical Graphene, BN, MoS2 CVD Graphene

SEM Image Gallery

Graphene and 2D Materials Video

Related Process Techniques

ICP CVD

ICP CVD

Plasma deposition of high quality dielectric films at low temperature with low damage.

Related Tools

Nanofab

Nanofab

Controllable growth of nanotubes and nanowires with flexible temperature up to 1200°C

We're @ 10th PESM workshop this wk.Dr Welch is presenting a poster on Multiple-step ICP etching of magnetic metals https://t.co/a2XaN7rhMD
7:52 PM - 17 Oct 17
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