Plasma Enhanced Chemical Vapour Deposition (PECVD)

Features & benefits of PECVD
  • Top electrode RF driven (MHz and/or kHz); no RF bias on lower (substrate) electrode 
  • Substrate sits directly on heated electrode 
  • Gas injected into process chamber via “showerhead” gas inlet in the top electrode 
  • 0.5-1.0 Torr operating pressure 
  • Lower temperature processes compared to conventional CVD 
  • Film stress can be controlled by high/low frequency mixing techniques 
  • Dry plasma cleaning process with end-point control removes or reduces need for physical/chemical chamber cleaning 
  • Control over stoichiometry via process conditions
  • Offers a wide range of material deposition, including:
    • SiOx, SiNx and SiOxNy deposition for a wide range of applications including photonics structures, passivation, hard mask, etc. 
    • Amorphous silicon (a-Si:H) 
    • TEOS SiO2 with conformal step coverage, or void-free good step coverage 
    • SiC 
    • Diamond-like carbon (DLC)

PECVD Systems

Feature PlasmaPro 80 PECVD PlasmaPro 800 PECVD PlasmaPro 100 PECVD
Electrode size 240mm 460mm 240mm
Loading Open Load Load locked
Substrates See product brochure Up to 200mm with carriers options available for multi-wafers or small pieces
Dopants No Various dopants available which include PH3, B2H6, GeH4
Liquid Precursors No No Yes: TEOS
MFC controlled gaslines 4, 8 or 12 line gas box available
RF Switching for Stress Control Yes
Wafer stage temperature range 20°C to 400°C Standard 20°C to 400°C with option for up to 800°C

Insitu plasma clean

Yes Yes Yes. Endpoint available to ensure optimum clean time





TEOS Option

PlasmalabSystem133-TEOS-PECVD-door-4.jpgDelivery module enabling TEOS based PECVD in PlasmaPro 100
process tools

  • Excellent uniformity and conformality of deposition
  • Integrated purpose-designed solution
  • Optimised heated delivery lines
  • Housekeeping control valves
  • Heated TEOS module offers easy access, together with safe bubbler change-over using the optional clip-on glovebox
  • The module can be connected into cleanroom extraction systems for complete health and safety assurance
  • Control of film stress by pulsed high/low frequency power mixing
  • Control of deposition directionality and hence degree of step coverage by controlling oxygen radicals 
  • High quality, conformal deposition of SiO2 for photonics, dielectric layers and other structures

TEOS process chamber hardware

  • Optional heater-chiller for top electrode and gas inlet assembly heating
  • Chamber wall heating kit

Related Process Techniques



Plasma deposition of high quality dielectric films at low temperature with low damage.

Ion Beam Deposition (IBD)

Ion Beam Deposition (IBD)

Ion beam technology that allows films to be etched or deposited by the use of beams of charged ions in a high vacuum system.