PVD_chamber.jpgPhysical Vapour Deposition (PVD)

Magnetron sputtering of high quality metals and alloy films.

Key Features:

  • Typical process pressure: 1 - 30 mtorr
  • Good step coverage
  • Standard method for high quality Al and Al alloys, Ti, TiN, TiW
  • Multi magnetron up to 4 x 200mm cathodes
  • Single wafer processing under static magnetron
  • Single magnetron up to 10" diameter
  • Large temperature range substrate holder (-150°C to 400°C)
  • Substrates on a rotating holder
  • Pre-etch and RF Bias
  • Parameter: gas flows, pressure, DC/Pulsed DC/RF power
  • Variable substrate to target spacing
Feature   PlasmaPro 400 PlasmaPro 100
Magnetron Size up to 200mm up to 10"
Number of Magnetrons 4 x 200mm 1 x 10"
DC, Pulsed DC and RF options Yes Yes
RF Bias Yes Yes
Loading Loadlock Loadlock
MFC controlled gaslines Typically up to 4 Typically 4
Wafer stage temperature range 20 to 300ºC -150ºC to 400ºC
Variable Target to Wafer Separation No Yes

 

 

 

 

 

 

 

 

 

Related Process Techniques

ICP CVD

ICP CVD

Plasma deposition of high quality dielectric films at low temperature with low damage.

Ion Beam Deposition (IBD)

Ion Beam Deposition (IBD)

Ion beam technology that allows films to be etched or deposited by the use of beams of charged ions in a high vacuum system.

Related Tools

PlasmaPro 400

PlasmaPro 400

Magnetron sputtering process tool for Physical Vapour Deposition (PVD)