Reactive Ion Etch / Plasma Etch (RIE/PE)

Benefits of RIE/PE

  • Substrate electrode cooled
  • Top or bottom electrode RF driven (13.56 MHz)
  • Automatic switching
  • Shower head gas inlet (in the top electrode)
  • Parameter: gas flows, pressure, RF power

RIE-PE System Features

Feature PlasmaPro 80 RIE PlasmaPro 800 RIE
Electrode size 240mm 460mm
Loading Open Load
Substrates See product brochure
MFC controlled gaslines 4, 8 or 12 line gas box available
Wafer stage temperature range 10-80°C
He Back side cooling option Yes No
ICP option Yes No
Focused plasma Yes

Watch our latest webinar On Demand to find out ‘How Ion Beam Deposition enables high power lasers’…
11:45 AM - 23 Mar 18
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