Silicon Nitride (SiNx) PECVD

Silicon Nitride (SiN) Plasma Enhanced Chemical Vapour Deposition (PECVD)

SiN may be deposited with and without ammonia using Plasma Enhanced Chemical Vapour Deposition (PECVD).

Process Specification:

  PlasmaPro 80 PECVD PlasmaPro 100 PECVD PlasmaPro 800 PECVD PlasmaPro 1000 Stratum
Deposition Rate > 10nm > 5nm - > 70nm/min > 10nm > 10nm - > 70nm
Uniformity from < ± 2% to < ± 4% dependant on wafer size from < ± 2% to < ± 3% dependant on wafer size
Refractive Index 2.00 (controllable range 1.8-2.5)
Stress Controllable stress from 1GPa compressive to 0.5GPa tensile
Single Wafer Size Up to 200mm Up to 300mm Up to 450mm
Batch Size Up to 9 x 2", 4 x 3" Up to 43 x 2”, 19 x 3”, 10 x 100mm”, 7 x 120mm”, 4 x 150mm”, 2 x 200mm” Up to 61 x 2”, 26 x 3”, 15 x 100mm”, 9 x 120mm”, 7 x 150mm”, 3 x 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Silicon Nitride (SiNx) ICP CVD

Silicon Nitride (SiN) ICP CVD

SiN may be deposited using Inductively Coupled Plasma Chemical Vapour Deposition (ICP CVD)

  PlasmaPro 80 ICPCVD65 PlasmaPro 100 ICPCVD180 PlasmaPro 100 ICPCVD300 Please contact us for details
Deposition rate: > 10 nm/min > 8nm/min - > 70nm/min
(rates up to 120nm/min have been achieved)
>8nm/min - >80nm/min

> 8nm/min - > 40nm/min (higher rates have been achieved)

Uniformity: < ±7% (5mm excl zone, 2" wafer) from < ± 1.5% to < ± 5% dependant on wafer size

from < ± 2% to < ± 5% dependant on wafer size

< ± 5%

Refractive Index: ~1.95 2.00 (controllable)
Single wafer size: Up to 200mm Up to 150mm Up to 150mm Up to 300mm
Batch size N/A Up to 5 x 2" Up to 9 x 2”, 4 x 3”, 2 x 100mm Up to 22 x 2”, 9 x 3”, 5 x 100mm, 3 x 120mm
Stress: <-250MPa Controllable stress +/-100MP

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Silicon Nitride (SiNx) Reactive Ion Beam Deposition (RIBD)

Silicon Nitride (Si3N4) Reactive Ion Beam Deposition (RIBD)

Process Features:

  • Etch source available for pre-clean
  • Deposition Gases: Ar, N2

Process Specification

  Ionfab300
Deposition rate1: 0.5 to 4nm/min
Uniformity over 200mm:2, 3 < ±2%
Stress (compressive):3 < 500MPa
Wafer size: Up to 200mm

Notes:

1. May vary depending on chamber size
2. With 5mm edge exclusion
3. Stress and uniformity value are guaranteed for deposition rates up to 50% of maximum rate

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Silicon Nitride (SiNx) Sputter Deposition (PVD)

Silicon Nitride (SiN) Sputter Deposition

SiN has may be deposited using Physical Vapour Deposition (PVD), also known as Sputter Deposition.

Process Specification

  PlasmaPro 400
Deposition rate: > 3nm min
Refractive Index: 1.9 - 2.7 (controllable)
Uniformity: ± 5% (200mm Target Size)
Single wafer size: Up to 150mm
Batch size: 4 x 150mm or 8 x 100mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Silicon Nitride (SiNx) Atomic Layer Deposition (ALD)

Silicon Nitride (SiN) ALD

SiN may be deposited using Atomic Layer Deposition (ALD).

Process Specification

  FlexAL
Precursors: 3DMAS - liquid vapour draw @ 40°C
Non-metal precursors: N2/H2  plasma
Temperature range: 300°C - 400°C
Growth rate per cycle: 0.35 Å/cycle @ 350°C
Deposition rate: 0.15nm/min @ 350°C
Refractive Index: Up to 1.95 @ 350°C
Uniformity: ± 1.5% over 100, ± 2.5% over 150mm, ± 3.5% over 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

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