Silicon Nitride (SiN) ALD

SiN may be deposited using Atomic Layer Deposition (ALD).

Process Specification

Precursors: 3DMAS - liquid vapour draw @ 40°C
Non-metal precursors: N2/H2  plasma
Temperature range: 300°C - 400°C
Growth rate per cycle: 0.35 Å/cycle @ 350°C
Deposition rate: 0.15nm/min @ 350°C
Refractive Index: Up to 1.95 @ 350°C
Uniformity: ± 1.5% over 100, ± 2.5% over 150mm, ± 3.5% over 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

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