Silicon Nitride (Si3N4) Reactive Ion Beam Deposition (RIBD)

Process Features:

  • Etch source available for pre-clean
  • Deposition Gases: Ar, N2

Process Specification

Deposition rate1: 0.5 to 4nm/min
Uniformity over 200mm:2, 3 < ±2%
Stress (compressive):3 < 500MPa
Wafer size: Up to 200mm


1. May vary depending on chamber size
2. With 5mm edge exclusion
3. Stress and uniformity value are guaranteed for deposition rates up to 50% of maximum rate

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.