Silicon Dioxide (SiO2) Atomic Layer Deposition (ALD)

Silicon Dioxide (SiO2) Plasma ALD

AlN may be deposited using Atomic Layer Deposition  (ALD).

Process Specification

Precursors: BTBAS - t-butylaminosilane - liquid vapour draw @ 40°C
Non-metal precursors: 2 plasma
Temperature range: 140°C - 350°C
Growth rate per cycle: 1.2 Å/cycle @ 300°C
Deposition rate: 1.2nm/min @ 300°C
Refractive Index: 1.44 @ 300°C
Uniformity: ± 1.5% over 100, ± 2.5% over 150mm, ± 3.5% over 200mm (FlexAL)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Silicon Dioxide (SiO2) ICP CVD

Silicon Dioxide (SiO2) ICP CVD

SiO2 may be deposited using Inductively Coupled Plasma Chemical Vapour Deposition (ICP CVD).

  PlasmaPro 80 ICPCVD65 PlasmaPro 100 ICPCVD180 PlasmaPro 100 ICPCVD300 Please contact us for details
Deposition rate: > 10 nm/min > 8nm/min - > 70nm/min
(rates up to 120nm/min have been achieved)
>8nm/min - >100nm/min >8nm/min - >70mn/min
 
Uniformity: < ±7%
(5mm excl zone, 2"wafer)
from < ± 1.5% to < ± 5%
dependant on wafer size
from < ± 1.5% to < ± 5%
dependant on wafer size
< ± 5% 
Refractive Index: ~1.46 1.46 (controllable)
Single wafer size: Up to 200mm Up to 150mm Up to 150mm Up to 300mm
Batch size - Up to 5 x 2" Up to 22 x 2”, 9 x 3”,
5 x 100mm, 3 x 120mm
Stress: <-300MPa
<-100MPa at temperatures <100oC

 

Silicon Dioxide (SiO2) PECVD

Silicon Dioxide (SiO2) Plasma Enhanced Chemical Vapour Deposition (PECVD)

SiO2 may be deposited using Plasma Enhanced Chemical Vapour Deposition (PECVD).

Process Specification:

  PlasmaPro 80 PECVD PlasmaPro 100 PECVD PlasmaPro 800 PECVD PlasmaPro 1000 Stratum
Deposition Rate > 40nm > 40nm - > 230nm/min > 40nm > 40nm (higher deposition rates are available)
Uniformity from < ± 2% to < ± 4% dependant on wafer size from < ± 2% to < ± 3% dependant on wafer size
Refractive Index 1.46 (controllable)
Stress <-300MPa
<-50MPa with R.I. >1.5
Single Wafer Size Up to 200mm Up to 300mm Up to 450mm
Batch Size Up to 9 x 2", 4 x 3" Up to 43 x 2”, 19 x 3”, 10 x 100mm”, 7 x 120mm”, 4 x 150mm”, 2 x 200mm” Up to 61 x 2”, 26 x 3”, 15 x 100mm”, 9 x 120mm”, 7 x 150mm”, 3 x 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

SiO2 Reactive Ion Beam Deposition

Silicon Dioxide (SiO2) Ion Beam Deposition (IBD)

SiO2 may be deposited using Ion Beam Deposition (IBD).

Process Features:

  • Process gases: Ar, O2
  • Etch source available for pre-clean
  Ionfab300
Deposition rate: 0.5 to 22nm/min 
Uniformity over 200mm:1, 2 < ± 2% - < ± 3 (no shield)
Stress (compressive):2 < 500MPa
Wafer size: Up to 200mm

Notes:

1. With 5mm edge exclusion
2. Stress and uniformity value are guaranteed for deposition rates up to 50% of maximum rate

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Silicon Dioxide (SiO2) Sputter Deposition

Silicon Dioxide (SiO2) Sputter Deposition

Process Specification

  PlasmaPro 400
Deposition rate: > 6nm min
Refractive Index: 1.4 – 2.7
Uniformity: ± 5% (200mm Target Size)
Single wafer size: Up to 150mm
Batch size: 4 x 150mm or 8 x 100mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Silicon Dioxide (SiO2) TEOS

TEOS PECVD showing 84% conformal step coverage (415nm horizontal, 350nm sidewall) SiO2 on Silicon step structureSilicon Dioxide (SiO2) using TEOS

SiO2 may be deposited using TEOS for conformal step coverage.

Process Specification:

  PECVD ICP CVD
  PlasmaPro 100 PECVD PlasmaPro 100 ICPCVD
Deposition Rate > 30nm/min >8nm/min
Uniformity from < ± 2% to < ± 4% dependant on wafer size from < ± 3% to < ± 7% dependant on wafer size
Single wafer size Up to 200mm
Batch size Up to 9 x 2”, 4 x 3”, 2 x 100mm
Refractive Index 1.46 (controllable)
Stress <-300MPa

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Related Process Techniques

ICP CVD

ICP CVD

Plasma deposition of high quality dielectric films at low temperature with low damage.

Related Tools

FlexAL-montage

FlexAL ALD Tool

Remote plasma & thermal ALD in one flexible tool