Silicon Dioxide (SiO2) Plasma ALD

AlN may be deposited using Atomic Layer Deposition  (ALD).

Process Specification

Precursors: BTBAS - t-butylaminosilane - liquid vapour draw @ 40°C
Non-metal precursors: 2 plasma
Temperature range: 140°C - 350°C
Growth rate per cycle: 1.2 Å/cycle @ 300°C
Deposition rate: 1.2nm/min @ 300°C
Refractive Index: 1.44 @ 300°C
Uniformity: ± 1.5% over 100, ± 2.5% over 150mm, ± 3.5% over 200mm (FlexAL)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

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