TEOS PECVD showing 84% conformal step coverage (415nm horizontal, 350nm sidewall) SiO2 on Silicon step structureSilicon Dioxide (SiO2) using TEOS

SiO2 may be deposited using TEOS for conformal step coverage.

Process Specification:

  PECVD ICP CVD
  PlasmaPro 100 PECVD PlasmaPro 100 ICPCVD
Deposition Rate > 30nm/min >8nm/min
Uniformity from < ± 2% to < ± 4% dependant on wafer size from < ± 3% to < ± 7% dependant on wafer size
Single wafer size Up to 200mm
Batch size Up to 9 x 2”, 4 x 3”, 2 x 100mm
Refractive Index 1.46 (controllable)
Stress <-300MPa

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.