Silicon Dioxide (SiO2) ICP CVD

SiO2 may be deposited using Inductively Coupled Plasma Chemical Vapour Deposition (ICP CVD).

  PlasmaPro 80 ICPCVD65 PlasmaPro 100 ICPCVD180 PlasmaPro 100 ICPCVD300 Please contact us for details
Deposition rate: > 10 nm/min > 8nm/min - > 70nm/min
(rates up to 120nm/min have been achieved)
>8nm/min - >100nm/min >8nm/min - >70mn/min
 
Uniformity: < ±7%
(5mm excl zone, 2"wafer)
from < ± 1.5% to < ± 5%
dependant on wafer size
from < ± 1.5% to < ± 5%
dependant on wafer size
< ± 5% 
Refractive Index: ~1.46 1.46 (controllable)
Single wafer size: Up to 200mm Up to 150mm Up to 150mm Up to 300mm
Batch size - Up to 5 x 2" Up to 22 x 2”, 9 x 3”,
5 x 100mm, 3 x 120mm
Stress: <-300MPa
<-100MPa at temperatures <100oC