Silicon Dioxide (SiO2) Ion Beam Deposition (IBD)

SiO2 may be deposited using Ion Beam Deposition (IBD).

Process Features:

  • Process gases: Ar, O2
  • Etch source available for pre-clean
Deposition rate: 0.5 to 22nm/min 
Uniformity over 200mm:1, 2 < ± 2% - < ± 3 (no shield)
Stress (compressive):2 < 500MPa
Wafer size: Up to 200mm


1. With 5mm edge exclusion
2. Stress and uniformity value are guaranteed for deposition rates up to 50% of maximum rate

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.