Aluminium Nitride (AlN) Deposition

AlN may be deposited using the following process types:

Aluminium Nitride (AlN) Sputter Deposition

Aluminium Nitride (AlN) Sputter Deposition

TiN has may be deposited using Physical Vapour Deposition (PVD), also known as Sputter Deposition.

Process Specification

  PlasmaPro 400
Deposition rate: > 4nm min
Refractive Index: 2.0 - 2.2 (controllable)
Uniformity: ± 5% (200mm Target Size)
Single wafer size: Up to 150mm
Batch size: 4 x 150mm or 8 x 100mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Aluminium Nitride (AlN) Atomic Layer Deposition (ALD)

Aluminium Oxide (AlN) ALD

AlN may be deposited using Atomic Layer Deposition  (ALD).

Process Specification

Precursors: TMA - Al(CH3)3  - liquid vapour draw @ 30°C
Non-metal precursors: N2/H2  plasma
Temperature range: 30ºC - 350ºC
Growth rate per cycle: 0.6Å/cycle @ 300°C
Deposition rate: 0.36nm/min @ 300°C
Refractive Index: 1.90 @ 350°C
Uniformity: ± 1.5% over 100, ± 2.5% over 150mm, ± 3.5% over 200mm (FlexAL)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.