Aluminium Oxide (AlN) ALD

AlN may be deposited using Atomic Layer Deposition  (ALD).

Process Specification

Precursors: TMA - Al(CH3)3  - liquid vapour draw @ 30°C
Non-metal precursors: N2/H2  plasma
Temperature range: 30ºC - 350ºC
Growth rate per cycle: 0.6Å/cycle @ 300°C
Deposition rate: 0.36nm/min @ 300°C
Refractive Index: 1.90 @ 350°C
Uniformity: ± 1.5% over 100, ± 2.5% over 150mm, ± 3.5% over 200mm (FlexAL)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

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