Hafnium Nitride (HfN) ALD

HfN may be deposited using Atomic Layer Deposition (ALD).

Process Specification

Precursors: TEMAH - Hf(N(C2H5)(CH3))4  - liquid bubbled @ 70°C
Non-metal precursors: NH3 thermal, N2/H2 plasma
Temperature range: 140°C - 290°C
Growth rate per cycle: 0.9 Å/cycle @ 290°C
Deposition rate: 0.45nm/min @ 290°C
Uniformity: ± 2.0% over 100, ± 3.0% over 150mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Related Process Techniques

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Open loaded thermal ALD tool with plasma option


FlexAL ALD Tool

Remote plasma & thermal ALD in one flexible tool

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