Niobium Nitride (NbN) Atomic Layer Deposition (ALD)

NbN may be deposited using Atomic Layer Deposition  (ALD).

Process Specification

Precursors: TBTMEN – Nb(N-tBu)(NMeEt)3
Non-metal precursors: H2 plasma
Temperature range: 250°C
Growth rate per cycle: 0.6 Å/cycle @  250ºC
Deposition rate: 0.1nm/min @ 250°C (for low resistivity values)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.


Dr Ziad Melhem of Oxford Instruments NanoScience will be giving a talk at MIT on the enabling technologies, require…
5:21 PM - 16 Feb 18
View more of our tweets