Niobium Nitride (NbN) Atomic Layer Deposition (ALD)

NbN may be deposited using Atomic Layer Deposition  (ALD).

Process Specification

  FlexAL
Precursors: TBTMEN – Nb(N-tBu)(NMeEt)3
Non-metal precursors: H2 plasma
Temperature range: 250°C
Growth rate per cycle: 0.6 Å/cycle @  250ºC
Deposition rate: 0.1nm/min @ 250°C (for low resistivity values)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

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