Titanium Nitride (TiN) Deposition

TiN may be deposited using the following process types:

 

Titanium Nitride (TiN) Atomic Layer Deposition (ALD)

Titanium Nitride (TiN) Atomic Layer Deposition (ALD)

TiN may be deposited using Atomic Layer Deposition  (ALD).

Process Specification

Precursors: TiCl4 – liquid vapour draw @ 30°C
Non-metal precursors: N2/H2 plasma, NH3 thermal
Temperature range: 30 - 350°C (typ plasma) – 550°C (thermal)
Growth rate per cycle: 0.33 Å/cycle @ 350°C
Deposition rate: 0.13nm/min @ 350°C
Uniformity: ± 1.5% over 100, ± 2.0% over 150mm, ± 3.0% over 200mm (FlexAL)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Titanium Nitride (TiN) Sputter Deposition

Titanium Nitride (TiN) Deposition

TiN has may be deposited using Physical Vapour Deposition  (PVD), also known as Sputter Deposition.

Process Specification

  PlasmaPro 400
Deposition rate: > 1.5nm min
Uniformity: ± 5% (200mm Target Size)
Single wafer size: Up to 150mm
Batch size: 4 x 150mm or 8 x 100mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.