Titanium Nitride (TiN) Atomic Layer Deposition (ALD)

TiN may be deposited using Atomic Layer Deposition  (ALD).

Process Specification

Precursors: TiCl4 – liquid vapour draw @ 30°C
Non-metal precursors: N2/H2 plasma, NH3 thermal
Temperature range: 30 - 350°C (typ plasma) – 550°C (thermal)
Growth rate per cycle: 0.33 Å/cycle @ 350°C
Deposition rate: 0.13nm/min @ 350°C
Uniformity: ± 1.5% over 100, ± 2.0% over 150mm, ± 3.0% over 200mm (FlexAL)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.