Aluminium Oxide (Al2O3) Deposition

Al2O3 may be deposited using the following process types:

Aluminium Oxide (Al2O3) Atomic Layer Deposition (ALD)

80nm thick Al2O3 film in 2.5μm wide trenches with an aspect ratio of 10:1. Courtesy of Eindhoven University of Technology and Philips ResearchAluminium Oxide (Al2O3) plasma and thermal ALD

Al2O3 has applications in medium-k dielectric, wear resistant coating and barrier layers and may be deposited using Atomic Layer Deposition  (ALD). Process benefits include; true self-limiting ALD behaviour, high repeatability and high conformality.

Process Specification

Precursors: TMA - Al(CH3)3  - liquid vapour draw @ 30°C
Non-metal precursors: H2O thermal, O3 thermal, O2 plasma
Temperature range: 30ºC - 350ºC
Growth rate per cycle: 1Å/cycle @ 300°C
Deposition rate: 1.5nm/min @ 300°CFlex
Refractive Index: 1.64 @ 300°C
Uniformity: ± 1% over 100, ± 1.5% over 150mm, ± 2.0% over 200mm (FlexAL)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Aluminium Dioxide (Al2O3) Reactive Ion Beam Deposition

Al2O3 Ion Beam Deposition

Process Specification:

  • Al2O3 deposition with rotation and adjustable tilt
  • Etch source available for pre-clean
  • Deposition Gases: Ar, O2
  Ionfab 300
Deposition rate: 0.5 to 16nm/min
Uniformity over 200mm:1, 2 < ±2%
Reproducibility: < ±3%
Stress (compressive):2 < 500MPa
Wafer size: Up to 200mm

Notes:

1. With 5mm edge exclusion
2. Stress and uniformity value are guaranteed for deposition rates up to 50% of maximum rate

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.