Al2O3 Ion Beam Deposition

Process Specification:

  • Al2O3 deposition with rotation and adjustable tilt
  • Etch source available for pre-clean
  • Deposition Gases: Ar, O2
  Ionfab 300
Deposition rate: 0.5 to 16nm/min
Uniformity over 200mm:1, 2 < ±2%
Reproducibility: < ±3%
Stress (compressive):2 < 500MPa
Wafer size: Up to 200mm


1. With 5mm edge exclusion
2. Stress and uniformity value are guaranteed for deposition rates up to 50% of maximum rate

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.