80nm thick Al2O3 film in 2.5μm wide trenches with an aspect ratio of 10:1. Courtesy of Eindhoven University of Technology and Philips ResearchAluminium Oxide (Al2O3) plasma and thermal ALD

Al2O3 has applications in medium-k dielectric, wear resistant coating and barrier layers and may be deposited using Atomic Layer Deposition  (ALD). Process benefits include; true self-limiting ALD behaviour, high repeatability and high conformality.

Process Specification

Precursors: TMA - Al(CH3)3  - liquid vapour draw @ 30°C
Non-metal precursors: H2O thermal, O3 thermal, O2 plasma
Temperature range: 30ºC - 350ºC
Growth rate per cycle: 1Å/cycle @ 300°C
Deposition rate: 1.5nm/min @ 300°CFlex
Refractive Index: 1.64 @ 300°C
Uniformity: ± 1% over 100, ± 1.5% over 150mm, ± 2.0% over 200mm (FlexAL)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.