Hafnium Dioxide (HfO2) Deposition

HfO2 may be deposited using the following process types:

Hafnium Oxide (HfO2) Reactive Ion Beam Deposition (RIBD)

Hafnium Oxide (HfO2) Reactive Ion Beam Deposition (RIBD)

Process features:

  • Etch source available for pre-clean
  • Deposition Gases: Ar, O2

Process specification

1. HfO2 deposition with rotation and adjustable tilt

  Ionfab 300
Deposition rate: 1 to 7nm/min
Uniformity over 200mm:1, 2 < ± 2%
Stress (compressive):2 < 500MPa
Wafer size: Up to 200mm

Notes: 

1. With 5mm edge exclusion, uniformity described below
2. Stress and uniformity value are guaranteed for deposition rates up to 50% of maximum rate

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

Hafnium Dioxide (HfO2) Atomic Layer Deposition (ALD)

Hafnium Dioxide (HfO2) ALD

HfO2 may be deposited using Atomic Layer Deposition  (ALD).

Process Specification

Precursors: TEMAH - Hf(N(C2H5)(CH3))4  - liquid bubbled @ 70°C
Non-metal precursors: H2O thermal, O3 thermal, O­2 plasma
Temperature range: 140°C - 290°C
Growth rate per cycle: 1.1 Å/cycle @ 290°C (plasma), 0.8 Å/cycle @ 290°C (thermal)
Deposition rate: 0.8nm/min @ 290°C
Refractive Index: 2.01 – 2.05 @ 290°C
Uniformity: ± 1.5% over 100, ± 2.5% over 150mm, ± 3.5% over 200mm (FlexAL)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

Related Process Techniques

Ion Beam Deposition (IBD)

Ion Beam Deposition (IBD)

Ion beam technology that allows films to be etched or deposited by the use of beams of charged ions in a high vacuum system.