Hafnium Dioxide (HfO2) ALD

HfO2 may be deposited using Atomic Layer Deposition  (ALD).

Process Specification

Precursors: TEMAH - Hf(N(C2H5)(CH3))4  - liquid bubbled @ 70°C
Non-metal precursors: H2O thermal, O3 thermal, O­2 plasma
Temperature range: 140°C - 290°C
Growth rate per cycle: 1.1 Å/cycle @ 290°C (plasma), 0.8 Å/cycle @ 290°C (thermal)
Deposition rate: 0.8nm/min @ 290°C
Refractive Index: 2.01 – 2.05 @ 290°C
Uniformity: ± 1.5% over 100, ± 2.5% over 150mm, ± 3.5% over 200mm (FlexAL)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.