Hafnium Oxide (HfO2) Reactive Ion Beam Deposition (RIBD)

Process features:

  • Etch source available for pre-clean
  • Deposition Gases: Ar, O2

Process specification

1. HfO2 deposition with rotation and adjustable tilt

  Ionfab 300
Deposition rate: 1 to 7nm/min
Uniformity over 200mm:1, 2 < ± 2%
Stress (compressive):2 < 500MPa
Wafer size: Up to 200mm


1. With 5mm edge exclusion, uniformity described below
2. Stress and uniformity value are guaranteed for deposition rates up to 50% of maximum rate

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.