Lanthanum (III) Oxide (La2O3) Atomic Layer Deposition

La2O3 may be deposited using Atomic Layer Deposition (ALD).

Process Specification

Precursors: La(thd)3 - solid bubbled @ 180°C
Non-metal precursors: 2 plasma
Temperature range: 250 - 350°C
Growth rate per cycle: 0.18 Å/cycle @ 300°C
Deposition rate: 0.08nm/min @ 300°C
Refractive Index: 1.75 @ 300°C


Related Process Techniques

Related Tools



Open loaded thermal ALD tool with plasma option


FlexAL ALD Tool

Remote plasma & thermal ALD in one flexible tool

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