Tantalum Pentoxide (Ta2O5) Atomic Layer Deposition (ALD)

AlN may be deposited using Atomic Layer Deposition  (ALD).

Process Specification

Precursors: TBTMET - liquid bubbled @ 50°C
Non-metal precursors: 2 plasma
Temperature range: 100°C - 300°C
Growth rate per cycle: 1 Å/cycle @ 300°C
Deposition rate: 0.6nm/min @ 300°C
Refractive Index: 2.15 @ 300°C
Uniformity: ± 1.5% over 100, ± 2.5% over 150mm, ± 3.5% over 200mm (FlexAL)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.


Related Process Techniques

Related Tools



Open loaded thermal ALD tool with plasma option


FlexAL ALD Tool

Remote plasma & thermal ALD in one flexible tool

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