Titanium Oxide (TiO2) Atomic Layer Deposition (ALD)

TiO2 may be deposited using Atomic Layer Deposition (ALD).

Process Specification

Precursors: TTIP - titanium isopropoxide - Ti(OC3H7)4 - liquid bubbled @ 40°C
Non-metal precursors: H2O thermal, O2 plasma
Temperature range: 30ºC - 300ºC
Growth rate per cycle: 0.46Å/cycle @ 200°C
Deposition rate 0.35nm/min @ 200°C
Refractive Index: 1.44 @ 300°C
Uniformity: ± 1.5% over 100, ± 2.5% over 150mm, ± 3.5% over 200mm (FlexAL)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.