Vanadium Oxide (VOx ) Ion Beam Deposition

VOx may be deposited using Ion Beam Deposition (IBD).

Process features

  • Deposition rate used depends on electrical properties requirements of the deposited films
  • For the highest quality a lower rate is usually used

Process Specification:

  Ionfab 300
Deposition rate: Up to 6 nm/min
Deposition uniformity: <± 2 % over 200mm
Resistivity: Typical range: 0.2-10 Ohm.cm
Resistance uniformity: ± 3 %
Stress (compressive): < 500 MPa Compressive
Wafer size: Up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Download the poster

IBD of VOx Poster

Resistance repeatability of Ion-Beam Deposited Vanadium Oxide thin films

PDF 551KB

Related Process Techniques

Ion Beam Deposition (IBD)

Ion Beam Deposition (IBD)

Ion beam technology that allows films to be etched or deposited by the use of beams of charged ions in a high vacuum system.

Related Tools

Ionfab 300

Ionfab 300

Offers the flexibility to perform etch and/or deposition and maximising system utilisation

Dr Ziad Melhem of Oxford Instruments NanoScience will be giving a talk at MIT on the enabling technologies, require… https://t.co/MDz2SojzYv
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