Zinc Oxide (ZnO) Deposition

ZnO may be deposited using the following process types:

Zinc Oxide (ZnO) Sputter Deposition

Aluminium doped Zinc Oxide (ZnO) Sputter Deposition

ZnO has may be deposited using Physical Vapour Deposition (PVD), also known as Sputter Deposition.

Process Specification

  PlasmaPro 400
Deposition rate: > 30nm min
Refractive Index: 1.8 - 2.0
Uniformity: < ± 15% (250mm Target Size)
Single wafer size: Up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

Zinc Oxide (ZnO) Atomic Layer Deposition (ALD)

Zinc Oxide (ZnO) ALD

ZnO has applications in optoelectronics and transparent conductive oxide (TCO) and may be deposited using Atomic Layer Deposition (ALD). Process benefits include true self-limiting ALD behaviour, high repeatability and high conformality.

Process Specification

Precursors: DEZ - liquid vapour draw @ 30˚C
Non-metal precursors: H2O thermal, O3 thermal, O­2 plasma
Temperature range: 30°C - 200°C
Growth rate per cycle: 1.85 Å/cycle @ 200°C (thermal)
Deposition rate: 2.2nm/min @ 200°C
Refractive Index: 1.44 @ 300°C
Uniformity: ± 1.5% over 100, ± 2.5% over 150mm, ± 3.5% over 200mm (FlexAL)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

Related Process Techniques

Physical Vapour Deposition (PVD)

Physical Vapour Deposition (PVD)

Magnetron sputtering of high quality metals and alloy films

Related Tools

OpAL_Montage

OpAL ALD Tool

Open loaded thermal ALD tool with plasma option

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