Zinc Oxide (ZnO) ALD

ZnO has applications in optoelectronics and transparent conductive oxide (TCO) and may be deposited using Atomic Layer Deposition (ALD). Process benefits include true self-limiting ALD behaviour, high repeatability and high conformality.

Process Specification

Precursors: DEZ - liquid vapour draw @ 30˚C
Non-metal precursors: H2O thermal, O3 thermal, O­2 plasma
Temperature range: 30°C - 200°C
Growth rate per cycle: 1.85 Å/cycle @ 200°C (thermal)
Deposition rate: 2.2nm/min @ 200°C
Refractive Index: 1.44 @ 300°C
Uniformity: ± 1.5% over 100, ± 2.5% over 150mm, ± 3.5% over 200mm (FlexAL)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.