Ruthenium (Ru) Atomic Layer Deposition (ALD)

 

Ru has applications in barrier layers and metal electrodes and may be deposited using Atomic Layer Deposition  (ALD).

Process Specification

Precursors: Ru(EtCp)2 or CpRu(CO)2Et
Non-metal precursors: O2 (thermal and plasma)
Temperature range: 250ºC - 350ºC

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

Related Process Techniques

Related Tools

OpAL_Montage

OpAL ALD Tool

Open loaded thermal ALD tool with plasma option

FlexAL-montage

FlexAL ALD Tool

Remote plasma & thermal ALD in one flexible tool