Amorphous Silicon (a-Si) ICP CVD

a-Si may be deposited using Inductively Coupled Plasma Chemical Vapour Deposition (ICP CVD)

  PlasmaPro 100 ICPCVD180 PlasmaPro 100 ICPCVD300
Deposition rate > 5nm/min
Uniformity from < ± 2% to < ± 5% dependant on wafer size
Single wafer size up to 150mm up to 200mm
Batch size Up to 5 x 2"
Stress <-300MPa compressive

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.