Amorphous Silicon (a-Si) PECVD

a-Si may be deposited using Plasma Enhanced Chemical Vapour Deposition (PECVD).

  PlasmaPro 80 PECVD PlasmaPro 100 PECVD PlasmaPro 800 PECVD Please contact us for details
Deposition Rate > 5nm - > 25nm/min
Uniformity from < ± 2% to < ± 5% dependant on wafer size
Stress <300MPa compressive
Single Wafer Size up to 200mm up to 300mm up to 450mm
Batch Size up to 9 x 2", 4 x 3" up to 9 x 2", 4 x 3" up to 43 x 2”, 19 x 3”
10 x 100mm”, 7 x 120mm”,
4 x 150mm”, 2 x 200mm”
 

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

 

 

Dr Ziad Melhem of Oxford Instruments NanoScience will be giving a talk at MIT on the enabling technologies, require… https://t.co/MDz2SojzYv
5:21 PM - 16 Feb 18
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