HR-TEM picture, 200kV, elastically filtered taken by TU Chemnitz, showing the interface of a 200nm amoprhous DLC film deposited on a Si wafer at Oxford Instruments' application labDiamond Like Carbon (DLC) deposition

  • DLC deposited in the PlasmaPro 133 RIE features high breakdown voltage (example >1750V for a 120nm thick film), low leakage and high hardness. These properties make it a suitable passivation material for high voltage devices.
  • It allows both deposition and etching of DLC films. Its large electrode size allows batch mode of operation. For maximum throughput and ease of use a cassette-loaded version is also available.
  • Also uses optical emission to optimize the plasma clean or plasma etch time ensuring maximum throughput.

Process Specification

  PlasmaPro 133 RIE
Deposition rate: > 45nm/min
Uniformity: < ± 5% single 150mm (edge exclusion 7mm)
Batch size: up to 20 x 2", 5 x 100mm, 4 x 125mm Si substrates

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.