Polysilicon (PolySi) Deposition

Process features

  • Parallel Plate Reactor
  • Shower Head Gas inlet
  • SiH4 based process
  • LPCVD of polycrystalline silicon at 650°C

Process specification


Rate: > 40 nm/min
Uniformity: < +/-2 % across 100 mm wafer

XRD and Raman analysis of the as deposited films demonstrate the crystalline nature of the films:

  • Grain sizes > 100 nm and a degree of crystallinity > 80 %.
  • The polysilicon films grow preferentially along <1 1 0> orientation and crystallization occurs along <1 1 1> orientation.

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.