Silicon Carbide (SiC) ICP CVD

SiC may be deposited using Inductively Coupled Plasma Chemical Vapour Deposition (ICP CVD)

  PlasmaPro 100 ICPCVD180 PlasmaPro 100 ICPCVD300 Please contact us for details
Deposition rate: > 5nm/min
Uniformity: from < ± 2% to < ± 5% dependant on wafer size
Refractive Index: 2.6 (controllable range 2.4-2.7)
Single wafer size: up to 150mm up to 200mm up to 300mm
Batch size: Up to 5 x 2" Up to 6 x 2”  
Stress: <-300MPa compressive

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Catch up on our latest webinar which explores ‘How Ion Beam Deposition enables high power lasers’. View it On Deman…
9:34 AM - 21 Mar 18
View more of our tweets